| PART |
Description |
Maker |
| APT12040L2LL |
POWER MOS 7 1200V 30A 0.400 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
|
Advanced Power Technology Ltd.
|
| RURG30120 FN3399 |
30A, 1200V Ultrafast Diode(30A, 1200V 超快速二极管) 30 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247
30A/ 1200V Ultrafast Diode
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| APT12080LVR |
POWER MOS V 1200V 16A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT12080JVR |
POWER MOS V 1200V 15A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
ADPOW[Advanced Power Technology]
|
| RHRG30120CC FN3411 |
30A/ 1200V Hyperfast Dual Diode
30A, 1200V Hyperfast Dual Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| APT10026JLL |
POWER MOS 7 1000V 30A 0.260 Ohm
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| RJH1CD7DPQ-E0 |
1200V - 30A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RHRP30120 FN3409 |
From old datasheet system
30A, 1200V Hyperfast Diode
|
INTERSIL[Intersil Corporation]
|
| NGTB30N120IHSW |
IGBT 1200V 30A FS1 Induction Heating
|
ON Semiconductor
|
| RJK0855DPB RJK0855DPB-15 |
80V, 30A, 11 m max. Silicon N Channel Power MOS FET Power Switching
80V, 30A, 11 m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| APT12067JLL |
POWER MOS 7 1200V 17A 0.670 Ohm
|
Advanced Power Technology
|
| FGW30N120H |
Discrete IGBT (High-Speed V series) 1200V / 30A
|
Fuji Electric
|
